FDD8870
Manufacturer:
On Semiconductor
Mfr.Part #:
FDD8870
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 160 W 30 V Continuous Drain Current (ID):160 A 118 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 4.4 MΩ |
| Height | 2.39 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 160 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 160 W |
| Power Dissipation | 160 W |
| Threshold Voltage | 1.2 V |
| Number of Channels | 1 |
| Input capacitance | 5.16 nF |
| Continuous Drain Current (ID) | 160 A |
| Rds On Max | 3.9 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 83 ns |
| Element Configuration | Single |
| Fall Time | 42 ns |
| Rise Time | 83 ns |
| Gate Charge | 118 nC |
| Drain to Source Resistance | 3.2 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.2 V |
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